?2004 fairchild semiconductor corporation www.fairchildsemi.com rev.1.0.0 features ? precision fixed operating frequency (50khz) ? low start-up current(typ. 100ua) ? pulse by pulse current limiting ? over current protection ? over voltage protection (min. 25v) ? internal thermal shutdown function ? under voltage lockout ? internal high voltage sense fet ? auto-restart mode description the fairchild power switch(fps) pr oduct family is specially designed for an off-line smps with minimal external components. the fairchild power switch(fps) consists of a high voltage power sensefet and a current mode pwm ic. included pwm controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. compared to a discrete mosfet and a pwm controller or an rccsolution, a fairchild power switch(fps) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. it has a basic platform well suited for the cost effective design in a flyback converter . to-220f-4l 1. gnd 2. drain 3. v cc 4. fb 1 internal block diagram #3 v cc 32v 5 a 9v 2.5r 1r 1ma 0.1v + ? over voltage s/d + ? 7.5v 27v thermal s/d s r q power on reset + ? l.e.b s r q osc 5v vref internal bias good logic sfet #2 drain #1 gnd #4 fb ka5l0565r fairchild power switch(fps tm )
ka5l0565r 2 absolute maximum ratings notes: 1. t j = 25 c to 150 c 2. repetitive rating: pulse width limi ted by maximum junction temperature 3. l = 30mh, v dd = 50v, r g = 27 ? , starting t j = 25 c parameter symbol value unit drain-gate voltage (r gs =1m ? )v dgr 650 v gate-source (gnd) voltage v gs 30 v drain current pulsed (2) i dm 20 a dc single pulsed avalanche current (3) ( energy (2) )i as (e as ) 13(400) a(mj) continuous drain current (t c =25 c) i d 5.0 a dc continuous drain current (t c =100 c) i d 3.5 a dc maximum supply voltage v cc,max 30 v input voltage range v fb -0.3 to v sd v total power dissipation p d 38 w darting 0.3 w/ c operating ambient temperature t a -25 to +85 c storage temperature t stg -55 to +150 c
ka5l0565r 3 electrical characteristics (sensefet part) (ta=25 c unless otherwise specified) note: 1. pulse test: pulse width 300 s, duty cycle 2% 2. parameter symbol condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =50 a 650 - - v zero gate voltage drain current i dss v ds =max., rating, v gs =0v --50 a v ds =0.8max., rating, v gs =0v, t c =125 c - - 200 a static drain-source on resistance (note) r ds(on) v gs =10v, i d =2.5a - 1.76 2.2 ? forward transconductance (note) gfs v ds =50v, i d =2.5a 2.5 - - s input capacitance ciss v gs =0v, v ds =25v, f=1mhz - 1457 - pf output capacitance coss - 130 - reverse transfer capacitance crss - 38.8 - turn on delay time t d(on) v dd =0.5bv dss , i d =5.0a (mosfet switching time are essentially independent of operating temperature) --60 ns rise time tr - - 150 turn off delay time t d(off) - - 300 fall time tf - - 130 total gate charge (gate-source+gate-drain) qg v gs =10v, i d =5.0a, v ds =0.5bv dss (mosfet switching time are essentially independent of operating temperature) --56 nc gate-source charge qgs - 10.3 - gate-drain (miller) charge qgd - 22.3 - s 1 r --- - =
ka5l0565r 4 electrical characteristics (control part) (continued) (ta=25 c unless otherwise specified) note: 1. these parameters, although guaranteed, are not 100% tested in production 2. these parameters, although guaranteed, ar e tested in eds (wafer test) process parameter symbol condition min. typ. max. unit uvlo section start threshold voltage v start - 14 15 16 v stop threshold voltage v stop after turn on 8.4 9 9.6 v oscillator section initial accuracy f osc ka5l0565r 45 50 55 khz frequency change with temperature (2) ? f/ ? t-25 c ta +85 c- 5 10 % maximum duty cycle dmax ka5l0565r 72 77 82 % feedback section feedback source current i fb ta=25 c, 0v vfb 3v 0.7 0.9 1.1 ma shutdown feedback voltage v sd - 6.9 7.5 8.1 v shutdown delay current i delay ta=25 c, 5v vfb v sd 4.0 5.0 6.0 a reference section output voltage (1) vref ta=25 c 4.80 5.00 5.20 v temperature stability (1)(2) vref/ ? t-25 c ta +85 c-0.30.6mv/ c current limit (self-protection) section peak current limit i over max. inductor current 1.76 2.00 2.24 a protection section thermal shutdown temperature (tj) (1) t sd - 140 160 - c over voltage protection voltage v ovp - 25 27 29 v total device section start up current i start v cc =14v - 100 170 ua operating supply current (control part only) i op ta=25 c-712ma
ka5l0565r 5 typical performance characteristics (these characteristic graphs are normalized at ta=25 c) figure 1. operating frequency figure 2. feedback source current figure 3. operating supply current figure 4. peak current limit figure 5. start up current figure 6. start threshold voltage 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 fosc 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 ifb 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 iop 0.8 0.85 0.9 0.95 1 1.05 1.1 -25 0 25 50 75 100 125 150 ipeak 0.5 0.7 0.9 1.1 1.3 1.5 -25 0 25 50 75 100 125 150 istart 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vstart
ka5l0565r 6 typical performance characteristics (continued) (these characteristic graphs are normalized at ta=25 c) figure 7. stop threshold voltage figure 8. maximum duty cycle figure 9. v cc zener voltage figure 10. shutdown feedback voltage figure 11. shutdown delay current figure 12. over voltage protection 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vs to p 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 dmax 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 vz 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vsd 0.85 0.9 0.95 1 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 vovp 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 idelay
ka5l0565r 7 typical performance characteristics (continued) (these characteristic grahps are normalized at ta=25 c) figure 13. static drain-source on resistance 0 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 150 rdson
ka5l0565r 8 package dimensions to-220f-4l
ka5l0565r 9 package dimensions (continued) to-220f-4l(forming)
ka5l0565r 4/27/04 0.0m 001 stock#dsxxxxxxxx ? 2004 fairchild semiconductor corporation life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant in jury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ordering information tu : non forming type ydtu : forming type product number package rating fosc KA5L0565RTU to-220f-4l 650v, 5a 50khz ka5l0565rydtu to-220f-4l(forming)
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